Description:

The FE-III has fully automatic operation and a scanning stage. Unique optical and detection systems measure ellipsometric parameters over an angle range of 40 to 70 degrees simultaneously, giving more flexibility for measuring multiple film stacks. The scanning stage allows wafer uniformity to be evaluated rapidly. The system automatically calculates film thickness, index of refraction, and the extinction coefficient. Automatic or manual wafer loading; can be used with small pieces or full wafers up to 8” diameter.

Features:

• Class 1 filtered wafer environment
• Advanced measurement capability
• Simultaneous "multi-angle" of incidence measurements
• No order ambiguity for transparent films
• Increased parameter solving
• System intensity is automatically controlled to compensate for the varying intensity of different samples

 

Specifications:

•  4 - 8" wafer handling
• Small spot (12 x 24µm)
• Single measurement is performed within 1/10th of a second
• Advanced measurement capabilities:
  • Silicon dioxide: 0 - 5 microns
  • Silicon nitride: 0 - 8000Å
  • PhotoResist: 0 - 3 microns