Description:

Microwave downstream etcher. 

Features:

• Cassette to cassette wafer handling
• Front and backside etching
• Variable platen temperature
• Alumina (ceramic) plasma tube
• Fluorine compatible chamber
• SECS II interface
• Multiple step process caability
• Stand alone/ floor standing model

Specifications:

•  Configurable for 75mm,100mm,125mm, and150mm wafer sizes.
• Gases:
  • NF3,
  • CF4,
  • HE,
  • O2,
  • PURGE,
  • N2 (VCR Fittings)
• Etch rates and throughputs:
  • BPSG (2500A etch) >4000A/min - 40 WPH
  • TEOS (2500A etch) >2000A/min - 25 WPH
  • LTO (2500A etch) >2000A/min - 25 WPH
• Etch bias (CD Control) <0.05um
• Selectivity to photoresist >20:1
• Uniformity (within wafer):
  • 100mm *± 3% (5%3 sigma)
  • 150*± 5% (8% sigma)
• 208VAC / 60Hz / 30A/ 3 phase (WYE)