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GaSonics AE2001 Etch System

Description:

Microwave downstream etcher. 


Features:
  • Cassette to cassette wafer handling
  • Front and backside etching
  • Variable platen temperature
  • Alumina (ceramic) plasma tube
  • Fluorine compatible chamber
  • SECS II interface
  • Multiple step process caability
  • Stand alone/ floor standing model
Specifications:
  •  Configurable for 75mm,100mm,125mm, and150mm wafer sizes.
  • Gases:
    • NF3,
    • CF4,
    • HE,
    • O2,
    • PURGE,
    • N2 (VCR Fittings)
  • Etch rates and throughputs:
    • BPSG (2500A etch) >4000A/min - 40 WPH
    • TEOS (2500A etch) >2000A/min - 25 WPH
    • LTO (2500A etch) >2000A/min - 25 WPH
  • Etch bias (CD Control) <0.05um
  • Selectivity to photoresist >20:1
  • Uniformity (within wafer):
    • 100mm *± 3% (5%3 sigma)
    • 150*± 5% (8% sigma)
  • 208VAC / 60Hz / 30A/ 3 phase (WYE)
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