Description:

 The GaSonics L3510 is a versatile downstream photoresist removal system, designed for clean, damage-free removal of the most difficult resist structures. Utilizing the production-proven L-Series platform, the L3510 has a wide process window due to its patented microwave plasma source. Programmable heating and process controls contribute to the system's unparalleled process flexibility.

Features:

• Enhanced reliability, serviceability, and performance
• Proven platform (L-platform)
• Platen and lamp heating for process flexibility
• Reliable endpoint detection
• Small footprint, low cost of ownership
• System performance matching
• Option SMIF Indexer, AGV and robotic cassette loading
• Stand-alone or flish mount installation

Specifications:

• Gas Flows: O₂ = 1000 - 4000 sccm; N₂/H₂ = 100 - 1000 sccm; N₂ = 100 - 500 sccm
• Pressure: 0.5 - >5.0 torr
• Platen temperature: 100 - 300°C
• µwave Power: 0 - 1200 watts at 2.45 GHz/water cooled
• Lamp utilization: 0 - 100% (1000 watts)
• Throughput: 1.2µm softbaked

Typical Results:

• Descum: 45-60wph
• Photoresist: 45-60wph
• Implanted & Damaged: 45-60wpm
• Within a wafer: ±5% - 10%
• Wafter to wafer (average): ±5% - 10%
• Ash rate: up to 3.5µm/min
• System matching: ±10%
• Mobile Ion Concentration: 1^10/cm² size of 1^11/cm²
• CV Shift: ≤0.1 volt
• Particle: <0.02cm² size of 0.2µm

General Information:

• Substrate size: 3-8 inch/75mm-200mm
• Footprint: 30" (762mm) W x 38" (965mm) D x 58" (1473mm) H
• Electrical: 200 - 240 VAC, Single phase, 50/60 Hz., WYE configuration, 30 amp breaker
• Typical process gases: O2, N2/H2, N2 regulated 18-23 PSIG