Transparent

on Transparent4: Total thickness of top

2 layers >200A, measured

simultaneously on a 2 or 3

layer stack

Oxide on Poly1: <100A to 1.0 µm oxide

on >500A poly

Oxide: 700A to 1.0 µm

Oxynitride/Nitride: 700A to 1.0 µm

A single light source, a long life Xenon lamp,

ensures a seamless transition between visible

and UV light in the 200 - 830 nm wavelength

range. The UV-1050 system has selectable

spot sizes which provide maximum flexibility.

The 2.7 micron spot can be used to measure in

patterned areas on product wafers; while the

larger 40 micron spot is available for highly

scattering film like polysilicon and amorphous

silicon where spatial averaging is required to

assure accurate measurement.

The UV-1050's field-proven pattern

recognition, extensive analysis software, and

high reliability add up to an advanced thin

film measurement tool with the lowest cost

of ownership in its class.

Oxides: <20A to 40 um

Nitrides/Oxynitrides: <40A to 40 um

Photoresists/Polyimides: <500 A to 15 um

Oxide on Poly1: <100A to 1.0 um

oxide on >500A poly

Poly1 on Oxide: 200A to 2.0 um poly on

80A to 4,000A oxide

Poly1 on Nitride: 200A to 2.0 um poly on 80A to 4,000A nitride

Amorphous Silicon1: 200A to >1.0 um

amorphous Si on 80A to 4,000A oxide

Oxide on Aluminum2: <1,000A to 3.0 um

Oxide on Tungsten2: <1,000A to 3.0 um

220 nm to 800 nm, direct measurement

Thickness: 125A to 250A ± 2.5A of NIST

certified range

250A to 1.0 um ± 1% of

NIST certified range

Thickness: 2.0A, 3 sigma @ 20A to 40A,

oxide only

1.6A, 3 sigma @ 40A to 70A

1.3A, 3 sigma @ 70A to 250A

2.0A, 3 sigma @ 250A to 2,000A

0.1%, 3 sigma @ 2,000A to 1.0 um

Refractive

Index8: 0.00225, 3 sigma for oxides

and oxynitrides

Reflectivity: 248 nm - 2.25%, 3 sigma

365 nm - 0.75%, 3 sigma

436 nm - 0.75%, 3 sigma

Height: 63 inches (160 cm)

Width: 57 inches (145 cm)

Depth: 39 inches (99 cm)