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Category   >> Asher Systems   >> GaSonics L3510 Single Wafer Ashing System
Category   >> Etchers   >> GaSonics L3510 Single Wafer Ashing System
Category   >> Plasma Ashers   >> GaSonics L3510 Single Wafer Ashing System
Category   >> Plasma Etchers   >> GaSonics L3510 Single Wafer Ashing System

GaSonics L3510 Single Wafer Ashing System

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8" Cassette Handling w/ Zbot Downstream Microwave Asher GaSonics L3510 Single Wafer Ashing System Cassette Handling w/ Zbot Substrate Size: 3-8inch / 75mm-200mm MFC's for three process gases: 4L O2, 2L N2, 500cc O2 Pressure: 0.5->5.0 torr Platen Temperature 100-300 degC U-Wave Power: 0-1200 watt at 2.45GHz LampUtilization:0-100% (1000 watts) Throughput (1.2um blanket softbaked resist ashed to end point, expcept for descum<300A): Descum/ S.T: 45-60WPH Baked Photoresist: 45-60WPH Implanted & Damaged Photoresist: 25-55WPH Uniformity: (1 Sigma, ashed to 50% of > 1.2um) Ash Rate: <200A->3.5um/min System Matching: 2%-5% (1 sigma) Mobile Ion Concentration: 1E10/Cm2-1E11/Cm2 CV Shift: <0.1 volt Particle:<0.02/Cm2, size of 0.2um Typical Process Gases: O2, N2/H2, N2-regulated 18-23 PSIG Microwave Applicator Cassette Platform UV Lamp w/ lamp on detector 4mm reaction chamber 4 port comm board Vacuum stabilizer CPU Board 486DX Display / monitor / video card Three DC power supply Electrical: 200-240VAC, 3 Phase, 50/6HZ